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PRELIMINARY DATA SHEET
512M bits Mobile RAM
WTR (Wide Temperature Range) EDS51321DBH-TS (16M words x 32 bits)
Specifications
* Density: 512M bits * Organization 4M words x 32 bits x 4 banks * Package: 90-ball FBGA Lead-free (RoHS compliant) and Halogen-free * Power supply: VDD, VDDQ = 1.7V to 1.95V * Clock frequency: 166MHz/133MHz (max.) * 2KB page size Row address: A0 to A12 Column address: A0 to A8 * Four internal banks for concurrent operation * Interface: LVCMOS * Burst lengths (BL): 1, 2, 4, 8, full page * Burst type (BT): Sequential (1, 2, 4, 8, full page) Interleave (1, 2, 4, 8) * /CAS Latency (CL): 3 * Precharge: auto precharge option for each burst access * Driver strength: normal, 1/2, 1/4, 1/8 * Refresh: auto-refresh, self-refresh * Refresh cycles: 8192 refresh cycles/64ms * Operating ambient temperature range TA = -25C to +85C
Features
* x32 organization * Single pulsed /RAS * Burst read/write operation and burst read/single write operation capability * Byte control by DQM * Wide temperature range TA = -25C to +85C * Low Power Function below is not supported Partal Array Self-Refresh (PASR) Auto Temperature Compensated Self-Refresh Deep power-down mode
Ordering Information
Part number EDS51321DBH-6DTS-F EDS51321DBH-7BTS-F Organization (words x bits) 16M x 32 Internal Banks 4 Clock frequency MHz (max.) 166 133 /CAS latency 3 Package 90-ball FBGA
Document No. E1415E21 (Ver. 2.1) Date Published March 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008-2009
EDS51321DBH-TS
Part Number
E D S 51 32 1 D BH - 6D TS - F
Elpida Memory
Type
D: Monolithic Device
Environment Code F: Lead Free (RoHS Compliant) and Halogen Free
Spec Detail TS: WTR (-25C to +85C)
Product Family S: (SDR) Mobile RAM
Density / Bank 51: 512Mb/4-bank Organization 32: x32 Power Suply, Interface 1: 1.8V, LVCMOS, w/o Low Power Function
Speed 6D: 166MHz/CL3 7B: 133MHz/CL3 Package BH: FBGA Die Rev.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
2
EDS51321DBH-TS
Pin Configurations
/xxx indicates active low signal.
90-ball FBGA
1 2 3 4 5 6 7 8 9
A
DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0
/CAS
VDD
DQ6
DQ1
B
DQ28 VDDQ VSSQ
C
VSSQ DQ27 DQ25
D
VSSQ DQ29 DQ30
E
VDDQ DQ31 NC A3 A6 A12 A9
NC
VSS
DQ16 VSSQ DQM2 VDD A0 BA1 /CS A1 A11 /RAS
F
VSS DQM3
G
A4 A5 A8 CKE
NC
H
A7
J
CLK
K
DQM1 /WE DQM0
DQ7 VSSQ
DQ5 VDDQ
DQ3 VDDQ
L
VDDQ DQ8
M
VSSQ DQ10 DQ9
N
VSSQ DQ12 DQ14
P
DQ11 VDDQ VSSQ VDDQ VSSQ DQ4
VDD DQ0 DQ2
R
DQ13 DQ15 VSS
(Top view)
Pin name A0 to A12 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 Function Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Pin name CLK CKE VDD VSS VDDQ VSSQ NC Function Clock input Clock enable Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
CONTENTS Specifications.................................................................................................................................................1 Features.........................................................................................................................................................1 Ordering Information......................................................................................................................................1 Part Number ..................................................................................................................................................2 Pin Configurations .........................................................................................................................................3 Electrical Specifications.................................................................................................................................5 Block Diagram ...............................................................................................................................................9 Pin Function.................................................................................................................................................10 Command Operation ...................................................................................................................................12 Simplified State Diagram .............................................................................................................................21 Mode Register and Extended Mode Register Configuration.......................................................................22 Initialization Sequence.................................................................................................................................24 Operation of the Mobile RAM ......................................................................................................................25 Timing Waveforms.......................................................................................................................................41 Package Drawing ........................................................................................................................................48 Recommended Soldering Conditions..........................................................................................................49
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Electrical Specifications
* All voltages are referenced to VSS (GND). * After power up, execute power up sequence and initialization sequence before proper device operation is achieved (refer to the Power up sequence). Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating ambient temperature Storage temperature Symbol VT VDD IOS PD TA Tstg Rating -0.5 to +2.3 -0.5 to +2.3 50 1.0 -25 to +85 -55 to +125 Unit V V mA W C C Note
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = -25C to +85C)
Parameter Supply voltage Input high voltage Input low voltage Symbol VDD, VDDQ VSS, VSSQ VIH VIL min. 1.7 0 0.8 x VDD -0.3 max. 1.95 0 VDD + 0.3 0.3 Unit V V V V Notes 1 2 3 4
Notes: 1. 2. 3. 4.
The supply voltage with all VDD and VDDQ pins must be on the same level. The supply voltage with all VSS and VSSQ pins must be on the same level. VIH (max.) = 2.3V (pulse width 5ns) VIL (min.) = -0.5V (pulse width 5ns)
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
DC Characteristics 1 (TA = -25C to +85C, VDD, VDDQ = 1.7V to 1.95V, VSS, VSSQ = 0V)
Parameter /CAS latency Symbol Grade -6D -7B max. 70 65 Unit Test condition Burst length = 1, tRC = tRC (min.), VIL VIL (max.), VIH VIH (min.) CKE VIL (max.), tCK = tCK (min.) , VIL VIL (max.), VIH VIH (min.) CKE VIL (max.), tCK = , VIL VIL (max.), VIH VIH (min.) CKE, /CS = VIH, tCK = tCK (min.), VIL VIL (max.), VIH VIH (min.) CKE = VIH, tCK = , VIL VIL (max.), VIH VIH (min.) CKE VIL, tCK = tCK (min.), VIL VIL (max.), VIH VIH (min.) CKE VIL, tCK = VIL VIL (max.), VIH VIH (min.) CKE, /CS = VIH, tCK = tCK (min.), VIL VIL (max.), VIH VIH (min.) CKE = VIH, tCK = , VIL VIL (max.), VIH VIH (min.) tCK = tCK (min.), BL = 4 VIL VIL (max.), VIH VIH (min.) tRFC = tRFC (min.) VIL VIL (max.), VIH VIH (min.) VIL VIL (max.), VIH VIH (min.) Notes
Operating current
IDD1
mA
1, 2, 3
Standby current in power down
IDD2P
0.8
mA
6
Standby current in power down (input signal stable)
IDD2PS
0.6
mA
7
Standby current in non power down
IDD2N
-6D -7B
5.0 4.0
mA
4
Standby current in non power down (input signal stable)
IDD2NS
2.0
mA
8
Active standby current in power down
IDD3P
4.0
mA
1, 2, 6
Active standby current in power down (input signal stable)
IDD3PS
3.0
mA
2, 7
Active standby current in non power down IDD3N
15
mA
1, 2, 4
Active standby current in non power down IDD3NS (input signal stable) Burst operating current IDD4 -6D -7B
10 125 100 80 3.0
mA
2, 8
mA
1, 2, 5
Refresh current Self-refresh current
IDD5 IDD6
mA mA
3
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. Input signals are VIH or VIL fixed.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
DC Characteristics 2 (TA = -25C to +85C, VDD, VDDQ = 1.7V to 1.95V, VSS, VSSQ = 0V)
Parameter Input leakage current Output leakage current Output high voltage Output low voltage Symbol ILI ILO VOH VOL min. -2.0 -1.5 VDD - 0.2 -- max. 2.0 1.5 -- 0.2 Unit A A V V Test condition 0 VIN VDD 0 VOUT VDD, DQ = disable IOH = -0.1 mA IOL = 0.1 mA Notes
Pin Capacitance (TA = 25C, VDD, VDDQ = 1.7V to 1.95V)
Parameter Input capacitance Symbol CI1 CI2 Data input/output capacitance CI/O Pins CLK min. 1.5 typ. -- -- -- max. 4.0 4.0 4.5 Unit pF pF pF Notes 1, 2, 4 1, 2, 4 1, 2, 3, 4
Address, CKE, /CS, /RAS, /CAS, /WE, 1.5 DQM DQ 2.0
Notes: 1. 2. 3. 4.
Capacitance measured with Boonton Meter or effective capacitance measuring method. Measurement condition: f = 1MHz, 0.5 x VDDQ, 200mV swing. DQM = VIH to disable DOUT. This parameter is sampled and not 100% tested.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
AC Characteristics (TA = -25C to +85C, VDD, VDDQ = 1.7V to 1.95V, VSS, VSSQ = 0V)
-6D Parameter System clock cycle time CLK high pulse width CLK low pulse width Access time from CLK Data-out hold time CLK to Data-out low impedance CLK to Data-out high impedance Input setup time Input hold time Active to Ref/Active command period Refresh to Ref/Active command period Self-refresh exit to Ref/Active command period Active to Precharge command period Active command to column command (same bank) Precharge to active command period Write recovery or data-in to precharge lead time Last data into active latency Active (a) to Active (b) command period Mode register set to active command period Transition time (rise and fall) Refresh period (8192 refresh cycles) Symbol tCK tCH tCL tAC tOH tLZ tHZ tSI tHI tRC tRFC tSREX tRAS tRCD tRP tDPL tDAL tRRD tMRD tT tREF min. 6 2.5 2.5 -- 2.6 0 -- 1.9 0.9 72.5 80 120 45 18 18 15 2CLK + tRP 12 2 0.5 -- max. -- -- -- 5.4 -- -- 5.4 -- -- -- -- -- 120000 -- -- -- -- -- -- 1.0 64 -7B min. 7.5 2.5 2.5 -- 2.6 0 -- 1.9 0.9 72.5 80 120 45 22.5 22.5 15 2CLK + tRP 15 2 0.5 -- max. -- -- -- 6.0 -- -- 6.0 -- -- -- -- -- 120000 -- -- -- -- -- -- 1.0 64 ns tCK ns ms 1 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 1 1, 5 1, 5 1, 2, 5 1, 2, 5 1, 2, 3, 5 1, 4 1, 5 1, 5 1 1 1 1 1 1 1
Notes: 1. 2. 3. 4. 5.
AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 0.5 x VDDQ. Access time is measured at 0.5 x VDDQ. Load condition is CL = 15pF. tLZ (min.) defines the time at which the outputs achieves the low impedance state. tHZ (max.) defines the time at which the outputs achieves the high impedance state. If tT 1ns, each parameters is changed as follows; tAC, tOH, tLZ: should be added (tT (rise)/2 - 0.5) tCH, tCL, tSI, tHI: should be added {(tT (rise) + tT (fall))/2 - 1}
Test Conditions * Input and output timing reference levels: VDDQ x 0.5 * Input waveform and output load: See following figures
1.6V
input
0.2V
1.4V 0.3V
I/O CL
tT
tT
Output load
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Block Diagram
CLK CKE
Clock Generator
Bank 3
Bank 2
Bank 1
Address
Mode Register
Row Decoder
Row Address Buffer & Refresh Counter
Bank 0
Sense Amplifier
Command Decoder Control Logic
/CS /RAS /CAS /WE
Data Control Circuit
Input & Output Buffer
Latch Circuit
Column Address Buffer & Burst Counter
Column Decoder & Latch Circuit
DQM
DQ
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Pin Function
CLK (input pin) CLK is the master clock input. Other inputs signals are referenced to the CLK rising edge. CKE (input pins) CKE determine validity of the next CLK (clock). If CKE is high, the next CLK rising edge is valid; otherwise it is invalid. If the CLK rising edge is invalid, the internal clock is not issued and the Synchronous DRAM suspends operation. When the Synchronous DRAM is not in burst mode and CKE is negated, the device enters power down mode. During power down mode, CKE must remain low. /CS (input pins) /CS low starts the command input cycle. When /CS is high, commands are ignored but operations continue. /RAS, /CAS, and /WE (input pins) /RAS, /CAS and /WE have the same symbols on conventional DRAM but different functions. For details, refer to the command table. A0 to A12 (input pins) Row Address is determined by A0 to A12 at the CLK (clock) rising edge in the active command cycle. Column Address is determined at the CLK rising edge in the read or write command cycle (See Address Pins table). [Address Pins Table]
Address (A0 to A12) Part number EDS51321DBH Row address AX0 to AX12 Column address AY0 to AY8
A10 defines the precharge mode. When A10 is high in the precharge command cycle, all banks are precharged; when A10 is low, only the bank selected by BA0 and BA1 is precharged. When A10 is high in read or write command cycle, the precharge starts automatically after the burst access. BA0 and BA1 (input pin) BA0 and BA1 are bank select signal (BS). (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
Remark: H: VIH. L: VIL. DQM0 to DQM3 (input pins) DQM controls I/O buffers. In read mode, DQM controls the output buffers like a conventional /OE pin. DQM high and DQM low turn the output buffers off and on, respectively. The DQM latency for the read is two clocks. In write mode, DQM controls the word mask. Input data is written to the memory cell if DQM is low but not if DQM is high. The DQM latency for the write is zero. Each DQM pin corresponds to eight DQ pins, respectively (See DQM Correspondence Table).
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
DQ0 to DQ31 (input/output pins) DQ pins have the same function as I/O pins on a conventional DRAM. [DQM Correspondence Table]
Organization x 32 bits Data mask DQM0 DQM1 DQM2 DQM3 DQs DQ0 to DQ7 DQ8 to DQ15 DQ16 to DQ23 DQ24 to DQ31
VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
11
EDS51321DBH-TS
Command Operation
Command Truth Table The Mobile RAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE Function Device deselect No operation Burst stop Read Read with auto precharge Write Write with auto precharge Bank activate Precharge select bank Precharge all banks Mode register set Extended mode register set Symbol DESL NOP BST READ READA WRIT WRITA ACT PRE PALL MRS EMRS n-1 H H H H H H H H H H H H n x x x x x x x x x x x x /CS H L L L L L L L L L L L /RAS x H H H H H H L L L L L /CAS x H H L L L L H H H L L /WE x H L H H L L H L L L L BA1 x x x V V V V V V x L H BA0 x x x V V V V V V x L L A10 x x x L H L H V L H L L Address x x x V V V V V x x V V
Remark: H: VIH. L: VIL. x: VIH or VIL. V: Valid address input. Device deselect command [DESL] When this command is set (/CS is high), the Mobile RAM ignore command input at the clock. However, the internal status is held. No operation [NOP] This command is not an execution command. However, the internal operations continue. Burst stop command [BST] This command can stop the current burst operation. Column address strobe and read command [READ] This command starts a read operation. In addition, the start address of burst read is determined by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation, the output buffer becomes high-Z. Read with auto precharge [READA] This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8. Column address strobe and write command [WRIT] This command starts a write operation. When the burst write mode is selected, the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). Write with auto precharge [WRITA] This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0, BA1 and determines the row address (A0 to A12). (See Bank Select Signal Table) Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts the refresh operation. There are two types of refresh operation, the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section. Mode register set [MRS] The Mobile RAM has a mode register that defines how it operates. The mode register is specified by the address pins (A0 to BA0 and BA1) at the mode register set cycle. For details, refer to the mode register configuration. After power on, the contents of the mode register are undefined, execute the mode register set command to set up the mode register. Extended mode register set [EMRS] The Mobile RAM has an extended mode register that defines the driver strength (DS).
Preliminary Data Sheet E1415E21 (Ver. 2.1)
13
EDS51321DBH-TS
DQM Truth Table
CKE Function Data write / output enable Data mask / output disable DQ0 to DQ7 write enable/output enable DQ8 to DQ15 write enable/output enable DQ16 to DQ23 write enable/output enable DQ24 to DQ31 write enable/output enable DQ0 to DQ7 write inhibit/output disable DQ8 to DQ15 write inhibit/output disable DQ16 to DQ23 write inhibit/output disable DQ24 to DQ31 write inhibit/output disable Symbol ENB MASK ENB0 ENB1 ENB2 ENB3 MASK0 MASK 1 MASK 2 MASK 3 n-1 H H H H H H H H H H n x x x x x x x x x x DQM 0 L H L x x x H x x x 1 L H x L x x x H x x 2 L H x x L x x x H x 3 L H x x x L x x x H
Remark: H: VIH. L: VIL. x: VIH or VIL CKE Truth Table
CKE Current state Activating Any Clock suspend Idle Idle Self-refresh Idle Power down Function Clock suspend mode entry Clock suspend mode Clock suspend mode exit CBR (auto) refresh command Self-refresh entry Self-refresh exit Power down entry Power down exit REF SELF Symbol n-1 H L L H H L L H H L L n L L H H L H H L L H H /CS x x x L L L H L H H L /RAS x x x L L H x H x x H /CAS x x x L L H x H x x H /WE x x x H H H x H x x H Address x x x x x x x x x x x
Remark: H: VIH. L: VIL. x: VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
14
EDS51321DBH-TS
Function Truth Table The following table shows the operations that are performed when each command is issued in each mode of the Mobile RAM. The following table assumes that CKE is high.
Current state Precharge /CS H L L L L L L L L L Idle H L L L L L L L L L Row active H L L L L L L L L L /RAS x H H H H L L L L L x H H H H L L L L L x H H H H L L L L L /CAS x H H L L H H L L L x H H L L H H L L L x H H L L H H L L L /WE x H L H L H L H L L x H L H L H L H L L x H L H L H L H L L Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS Operation Enter IDLE after tRP Enter IDLE after tRP ILLEGAL ILLEGAL* ILLEGAL* ILLEGAL* NOP*
5 3 3 3
ILLEGAL ILLEGAL ILLEGAL NOP NOP ILLEGAL ILLEGAL* ILLEGAL*
4 4
Bank and row active NOP Refresh Mode register set*
8 8
Extended mode register set* NOP NOP ILLEGAL Begin read*
6 6
Begin write*
Other bank active 2 ILLEGAL on same bank* Precharge* ILLEGAL ILLEGAL ILLEGAL
7
Preliminary Data Sheet E1415E21 (Ver. 2.1)
15
EDS51321DBH-TS
Current state Read
/CS H L L L L L L L L L
/RAS x H H H H L L L L L x H H H H L L L L L x H H H H L L L L L
/CAS x H H L L H H L L L x H H L L H H L L L x H H L L H H L L L
/WE x H L H L H L H L L x H L H L H L H L L x H L H L H L H L L
Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS
Operation Continue burst to end Continue burst to end Burst stop Continue burst read to /CAS latency and New read Term burst read/start write Other bank active 2 ILLEGAL on same bank* Term burst read and Precharge ILLEGAL ILLEGAL ILLEGAL Continue burst to end and precharge Continue burst to end and precharge ILLEGAL ILLEGAL* ILLEGAL*
3 3
Read with auto precharge
H L L L L L L L L L
Other bank active 2 ILLEGAL on same bank* ILLEGAL* ILLEGAL ILLEGAL ILLEGAL Continue burst to end Continue burst to end Burst stop Term burst and New read Term burst and New write Other bank active 3 ILLEGAL on same bank* Term burst write and Precharge* ILLEGAL ILLEGAL ILLEGAL
1 3
Write
H L L L L L L L L L
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Current state Write with auto precharge
/CS H L L L L L L L L L
/RAS x H H H H L L L L L x H H H H L L L L L x H H H H L L L L L x H H H H L L L L L
/CAS x H H L L H H L L L x H H L L H H L L L x H H L L H H L L L x H H L L H H L L L
/WE x H L H L H L H L L x H L H L H L H L L x H L H L H L H L L x H L H L H L H L L
Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE MODE
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS EMRS
Operation Continue burst to end and precharge Continue burst to end and precharge ILLEGAL ILLEGAL* ILLEGAL*
3 3
Other bank active 3 ILLEGAL on same bank* ILLEGAL* ILLEGAL ILLEGAL ILLEGAL Enter IDLE after tRC Enter IDLE after tRC ILLEGAL ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL* ILLEGAL ILLEGAL ILLEGAL NOP NOP ILLEGAL ILLEGAL* ILLEGAL*
4 4 9 4 4 4 4 3
Refresh (auto-refresh)
H L L L L L L L L L
Mode register set
H L L L L L L L L L
Bank and row active* NOP Refresh*
9 8
Mode register set*
Extended mode register set* NOP NOP ILLEGAL ILLEGAL* ILLEGAL*
4 4 9
8
Extended mode register H set L L L L L L L L L
Bank and row active* NOP Refresh*
9 8
Mode register set*
Extended mode register set*
8
Remark: H: VIH. L: VIL. x: VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. An interval of tDPL is required between the final valid data input and the precharge command. If tRRD is not satisfied, this operation is illegal. Illegal for same bank, except for another bank. Illegal for all banks. NOP for same bank, except for another bank. Illegal if tRCD is not satisfied. Illegal if tRAS is not satisfied. MRS command must be issued after DOUT finished, in case of DOUT remaining. Illegal if tMRD is not satisfied.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Command Truth Table for CKE
CKE Current State Self-refresh n-1 n H L L L L L Self-refresh recovery H H H H H H H H Power down H L L L All banks idle H H H H H H H H H H L L Row active H L Any state other than listed above H H L L x H H H H L H H H H L L L L x H H L H H H H H L L L L L H L x x H L H L /CS x H L L L x H L L L H L L L x H L x H L L L L H L L L L x x x x x x x x /RAS /CAS /WE Address x x H H L x x H H L x H H L x x H x x H L L L x H L L L x x x x x x x x x x H L x x x H L x x H L x x x H x x x H L L x x H L L x x x x x x x x x x x x x x x x x x x x x x x x H x x x x H L x x x H L x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x Operation INVALID, CLK (n - 1) would exit self-refresh Self-refresh recovery Self-refresh recovery ILLEGAL ILLEGAL Continue self-refresh Idle after tRC Idle after tRC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL INVALID, CLK (n - 1) would exit power down EXIT power down EXIT power down Continue power down mode Refer to operations in Function Truth Table Refer to operations in Function Truth Table Refer to operations in Function Truth Table Auto-refresh Notes
OPCODE Refer to operations in Function Truth Table Begin power down next cycle Refer to operations in Function Truth Table Refer to operations in Function Truth Table Self-refresh 1
OPCODE Refer to operations in Function Truth Table Exit power down next cycle Power down Refer to operations in Function Truth Table Clock suspend Refer to operations in Function Truth Table Begin clock suspend next cycle Exit clock suspend next cycle Maintain clock suspend 2 1 1
Remark: H: VIH. L: VIL. x: VIH or VIL Notes: 1. Self-refresh can be entered only from the all banks idle state. Power down can be entered only from all banks idle. Clock suspend can be entered only from following states, row active, read, read with auto precharge, write and write with auto precharge. 2. Must be legal command as defined in Function Truth Table.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Clock suspend mode entry The Mobile RAM enters clock suspend mode from active mode by setting CKE to low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock suspend mode changes depending on the current status (1 clock before) as shown below. ACTIVE clock suspend This suspend mode ignores inputs after the next clock by internally maintaining the bank active status. READ suspend and READ with Auto precharge suspend The data being output is held (and continues to be output). WRITE suspend and WRIT with Auto precharge suspend In this mode, external signals are not accepted. However, the internal state is held. Clock suspend During clock suspend mode, keep the CKE to low. Clock suspend mode exit The Mobile RAM exits from clock suspend mode by setting CKE to high during the clock suspend state. IDLE In this state, all banks are not selected, and completed precharge operation. Auto-refresh command [REF] When this command is input from the IDLE state, the Mobile RAM starts auto-refresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.) During the auto-refresh operation, refresh address and bank select address are generated inside the Mobile RAM. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 4096 times are required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh, no precharge command is required after auto-refresh. Self-refresh entry [SELF] When this command is input during the IDLE state, the Mobile RAM starts self-refresh operation. After the execution of this command, self-refresh continues while CKE is low. Since self-refresh is performed internally and automatically, external refresh operations are unnecessary. Power down mode entry When this command is executed during the IDLE state, the Mobile RAM enters power down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit. Self-refresh exit When this command is executed during self-refresh mode, the Mobile RAM can exit from self-refresh mode. After exiting from self-refresh mode, the Mobile RAM enters the IDLE state. Power down exit When this command is executed at the power down mode, the Mobile RAM can exit from power down mode. After exiting from power down mode, the Mobile RAM enters the IDLE state.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Simplified State Diagram
EXTENDED MODE REGISTER SET EMRS
SELF REFRESH SR ENTRY SR EXIT
MODE REGISTER SET
MRS IDLE
REFRESH
*1 AUTO REFRESH
CKE CKE_ IDLE POWER DOWN
ACTIVE CLOCK SUSPEND
ACTIVE
CKE_ CKE ROW ACTIVE
BST
BST
WRITE Write WRITE SUSPEND CKE_ WRITE CKE WRITE WITH AP CKE_ WRITEA SUSPEND WRITEA CKE PRECHARGE READ WITH AP WRITE WITH AP READ READ WITH AP WRITE
READ Read CKE_ READ CKE READ WITH AP CKE_ READA CKE PRECHARGE READA SUSPEND READ SUSPEND
WRITE WITH AP
PRECHARGE
POWER APPLIED
POWER ON
PRECHARGE PRECHARGE
Automatic transition after completion of command. Transition resulting from command input. Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Mode Register and Extended Mode Register Configuration
Mode Register Set The mode register is set by the input to the address pins (A0 to A12, BA0 and BA1) during mode register set cycles. The mode register consists of five sections, each of which is assigned to address pins. BA1, BA0, A8, A9, A10, A11, A12: (OPCODE): The Mobile RAM has two types of write modes. One is the burst write mode, and the other is the single write mode. These bits specify write mode. Burst read and burst write: Burst write is performed for the specified burst length starting from the column address specified in the write cycle. Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of the burst length. A7: Keep this bit low at the mode register set cycle. If this pin is high, the vender test mode is set. A6, A5, A4: (LMODE): These pins specify the /CAS latency. A3: (BT): A burst type is specified. A2, A1, A0: (BL): These pins specify the burst length.
BA1 BA0 A12
A11
A10
A9
A8
A7 0
A6
A5 LMODE
A4
A3 BT
A2
A1 BL
A0
OPCODE
A6 0 0 0 0 1
A5 0 0 1 1 X
A4 CAS latency 0 1 0 1 X R R R 3 R
A3 Burst type 0 Sequential 1 Interleave
A2 A1 0 0 0 0 1
1
A0 0 1 0 1 0
1
Burst length BT=0 1 2 4 8 R
R
BT=1 1 2 4 8 R
R
0 0 1 1 0
0
BA1 BA0 A12 A11 0 0 0 0 0 1 1
X X X
A10 0 X X X
X X
X
A9 0 0
0
0
0 1
1
Write mode A8 0 Burst read and burst write
0
0
0
1 0
1
1 1
1 1
0 1
R F.P.
R R
1 0 1
X X X
X X X
X X X
X X X
X X
X
R
R
R
R Burst read and single write
R
F.P.: Full Page R is Reserved (inhibit) X: 0 or 1
Mode Register Set
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Extended Mode Register Set A5 and A6: These pins specify driver strength.
BA1 BA0 1 0 A12 A11 A10 0 0
A9 0
A8 0
A7 0
A6
A5 DS
A4 0
A3 0
A2 0
A1 0
A0 0
0
A6 A5 Driver Strength 0 0 1 1 0 1 0 1 Normal 1/2 strength 1/4 strength 1/8 strength
Extended Mode Register Set
Burst Sequence
Burst length = 2 Starting Ad. Addressing(decimal)
Burst length = 4 Starting Ad. Addressing(decimal)
A0 0 1
Sequential Interleave
0, 1, 1, 0, 0, 1, 1, 0,
A1 0 0 1 1
A0 0 1 0 1
Sequential
0, 1, 2, 3, 1, 2, 3, 0, 2, 3, 0, 1, 3, 0, 1, 2,
Interleave
0, 1, 2, 3, 1, 0, 3, 2, 2, 3, 0, 1, 3, 2, 1, 0,
Burst length = 8 Starting Ad.
Addressing(decimal) Interleave
0, 1, 2, 3, 4, 5, 6, 7, 1, 0, 3, 2, 5, 4, 7, 6, 2, 3, 0, 1, 6, 7, 4, 5, 3, 2, 1, 0, 7, 6, 5, 4, 4, 5, 6, 7, 0, 1, 2, 3, 5, 4, 7, 6, 1, 0, 3, 2, 6, 7, 4, 5, 2, 3, 0, 1, 7, 6, 5, 4, 3, 2, 1, 0,
A2 0 0 0 0 1
1
A1 0 0 1 1 0
0
A0 Sequential 0 1 0 1 0
1
0, 1, 2, 3, 4, 5, 6, 7, 1, 2, 3, 4, 5, 6, 7, 0, 2, 3, 4, 5, 6, 7, 0, 1, 3, 4, 5, 6, 7, 0, 1, 2, 4, 5, 6, 7, 0, 1, 2, 3, 5, 6, 7, 0, 1, 2, 3, 4, 6, 7, 0, 1, 2, 3, 4, 5, 7, 0, 1, 2, 3, 4, 5, 6,
1 1
1 1
0 1
Burst Sequence Full page burst is available only for sequential addressing. The addressing sequence is started from the column address that is asserted by read/write command. And the address is increased one by one. It is back to the address 0 when the address reaches at the end of address 511. "Full page burst" stops the burst read/write with burst stop command.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Initialization Sequence
The synchronous DRAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 200s or longer pause must precede any signal toggling. VDD should be turned on simultaneously or before VDDQ. (2) After the pause, all banks must be precharged using the Precharge command (The Precharge all banks command is convenient). (3) Once the precharge is completed and the minimum tRP is satisfied, two or more auto-refresh must be performed. (4) Both the mode register and the extended mode register must be programmed. After the mode register set cycle or the extended mode register set cycle, tMRD (2 CLK minimum) pause must be satisfied. Remarks: 1 The sequence of Auto-refresh, mode register programming and extended mode register programming above may be transposed. 2 CKE and DQM must be held high until the Precharge command is issued to ensure data-bus High-Z.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Operation of the Mobile RAM
Read/Write Operations Bank Active Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACT) command. An interval of tRCD is required between the bank active command input and the following read/write command input. Read Operation A read operation starts when a read command is input. Output buffer becomes low-Z in the (/CAS Latency - 1) cycle after read command set. The Mobile RAM can perform a burst read operation. The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and the bank select address at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes high-Z at the next clock after the successive burst-length data has been output. The /CAS latency and burst length must be specified at the mode register.
CLK
tRCD
Command
ACT
READ
Address
Row
Column
DQ
CL = 2 CL = 3
out 0
out 1 out 0
out 2 out 1
out 3 out 2 out 3
CL = /CAS latency Burst Length = 4
/CAS Latency
CLK
tRCD
Command
Address
ACT
READ
Row
Column
BL = 1
out 0 out 0 out 1
DQ
BL = 2
out 0 out 1 out 2 out 3
BL = 4
out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7
BL = 8
BL : Burst Length /CAS Latency = 2
Burst Length
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Write Operation Burst write or single write mode is selected by the OPCODE of the mode register. 1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read operations. The write start address is specified by the column address and the bank select address at the write command set cycle.
CLK
tRCD
Command
Address
ACT
WRIT
Row
Column
BL = 1
in 0
in 0
in 1
in 1 in 1
in 2 in 2
DQ
BL = 2
in 0
in 3
in 3
BL = 4
in 0
in 4
in 5
in 6
in 7
BL = 8
CL = 2, 3
Burst write 2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is only written to the column address and the bank select address specified by the write command set cycle without regard to the burst length setting. (The latency of data input is 0 clock).
CLK
tRCD
Command
ACT
WRIT
Address
DQ
Row
Column
in 0
Single write
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Auto Precharge During a read or write command cycle, A10 controls whether auto precharge is selected. A10 high in the Read or Write command (Read with auto precharge command or Write with auto precharge command), auto precharge is selected and begins automatically. The tRAS must be satisfied with a read with auto precharge or a write with auto precharge operation. In addition, the next activate command to the bank being precharged cannot be executed until the precharge cycle ends. Read with Auto Precharge In read cycle, once auto precharge has started, an activate command to the bank can be issued after tRP has been satisfied.
CLK
CL=2 Command
ACT
READA
tRAS
DQ
out0 out1 out2 out3
CL=3 Command
ACT
READA
tRAS
DQ
out0
out1
out2
out3
Note: Internal auto precharge starts at the timing indicated by " ". And an interval of tRAS is required between previous active (ACT) command and internal precharge "
".
Burst Read (BL = 4) Write with Auto Precharge In write cycle, the auto precharge starts at the timing of two clocks after the last data word input to the device. The tDAL must be satisfied to issue the next activate command to the bank being precharged.
CLK Command
ACT
ACT
WRITA
tRAS
DQ
in0
in1
in2
in3
tDAL
Note: Internal auto precharge starts at the timing indicated by " ". and an interval of tRAS is required between previous active (ACT) command and internal precharge " ".
Burst Write (BL = 4)
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
CLK Command
ACT ACT
WRITA
tRAS
DQ
in
tDAL
Note: Internal auto precharge starts at the timing indicated by " ". and an interval of tRAS is required between previous active (ACT) command and internal precharge " ".
Single Write
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Burst Stop Command During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus goes to high-Z after the /CAS latency from the burst stop command.
CLK Command DQ (CL = 2) DQ (CL = 3)
READ
BST
High-Z
out
out
out
out
out
out
High-Z
Burst Stop at Read During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes to high-Z at the same clock with the burst stop command.
CLK Command
DQ
WRITE
in
BST
High-Z
in
in
in
Burst Stop at Write
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Command Intervals Read Command to Read Command Interval 1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid.
CLK Command
Address
BS
ACT READ
READ
Row
Column A Column B
DQ
Bank0 Active
out A0 out B0 out B1 out B2 out B3
Column =A Column =B Column =A Column =B Dout Read Read Dout
CL = 3 BL = 4 Bank 0
READ to READ Command Interval (same ROW address in same bank) 2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid.
CLK Command
Address
ACT
Row 0
ACT
Row 1
READ READ
Column A Column B
BS
DQ
Bank0 Active Bank3 Bank0 Bank3 Active Read Read
out A0 out B0 out B1 out B2 out B3
Bank0 Bank3 Dout Dout
CL = 3 BL = 4
READ to READ Command Interval (different bank)
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Write Command to Write Command Interval 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority.
CLK Command
Address
ACT WRIT
WRIT
Row
Column A Column B
BS
DQ
Bank0 Active
in A0
in B0
in B1
in B2
in B3
Column =A Column =B Write Write
Burst Write Mode BL = 4 Bank 0
WRITE to WRITE Command Interval (same ROW address in same bank) 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. In the case of burst write, the second write command has priority.
CLK Command
Address
BS
ACT ACT
WRIT
WRIT
Row 0
Row 1
Column A Column B
DQ
Bank0 Active
in A0
in B0
in B1
in B2
in B3
Bank3 Bank0 Bank3 Active Write Write
Burst Write Mode BL = 4
WRITE to WRITE Command Interval (different bank)
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Read Command to Write Command Interval 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be set high so that the output buffer becomes high-Z before data input.
CLK Command
CL=2
READ WRIT
DQM
CL=3
in B0
High-Z
DQ (input)
in B1
in B2
in B3
DQ (output)
BL = 4 Burst write
READ to WRITE Command Interval (1)
CLK Command
READ WRIT
DQM
CL=2
out
2 clock
out out out out in in in in in in in in
DQ
CL=3
READ to WRITE Command Interval (2) 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank active state. However, DQM must be set high so that the output buffer becomes high-Z before data input.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Write Command to Read Command Interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed.
CLK
Command
DQM
DQ (input)
DQ (output)
WRIT
READ
in A0
out B0 Column = A Write Column = B Read
out B1
out B2
out B3
Burst Write Mode CL = 2 BL = 4 Bank 0
/CAS Latency Column = B Dout
WRITE to READ Command Interval (1)
CLK
Command
DQM
WRIT
READ
DQ (input)
DQ (output)
in A0
in A1
out B0 Column = A Write Column = B Read
out B1
out B2
out B3
Burst Write Mode CL = 2 BL = 4 Bank 0
/CAS Latency
Column = B Dout
WRITE to READ Command Interval (2) 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address).
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Read with Auto Precharge to Read Command Interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. Even when the first read with auto precharge is a burst read that is not yet finished, the data read by the second command is valid. The internal auto precharge of one bank starts at the next clock of the second command.
CLK Command BS DQ
bank0 Read A bank3 Read
".
READA
READ
out A0
out A1
out B0
out B1
CL= 3 BL = 4
Note: Internal auto-precharge starts at the timing indicated by "
Read with Auto Precharge to Read Command Interval (Different bank) 2. Same bank: The consecutive read command (the same bank) is illegal. Write with Auto Precharge to Write Command Interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. In the case of burst writes, the second write command has priority. The internal auto precharge of one bank starts two clocks later from the second command.
CLK Command BS DQ
in A0
bank0 Write A
WRITA
WRIT
in A1
in B0
bank3 Write
in B1
in B2
in B3
BL= 4
Note: Internal auto-precharge starts at the timing indicated by "
".
Write with Auto Precharge to Write Command Interval (Different bank) 2. Same bank: The consecutive write command (the same bank) is illegal.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Read with Auto Precharge to Write Command Interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, DQM must be set high so that the output buffer becomes high-Z before data input. The internal auto precharge of one bank starts at the next clock of the second command.
CLK Command BS CL = 2
DQM
READA
WRIT
CL = 3
in B0
in B1
in B2
in B3
DQ (input) DQ (output)
bank0 ReadA
High-Z
bank3 Write
".
BL = 4
Note: Internal auto-precharge starts at the timing indicated by "
Read with Auto Precharge to Write Command Interval (Different bank) 2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Write with Auto Precharge to Read Command Interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. However, in case of a burst write, data will continue to be written until one clock before the read command is executed. The internal auto precharge of one bank starts at two clocks later from the second command.
CLK Command BS
DQM
WRITA
READ
DQ (input) DQ (output)
in A0
out B0
bank0 WriteA bank3 Read
out B1
out B2
out B3
CL = 3 BL = 4
".
Note: Internal auto-precharge starts at the timing indicated by "
Write with Auto Precharge to Read Command Interval (Different bank) 2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command.
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Read Command to Precharge Command Interval (same bank) When the precharge command is executed for the same bank as the read command that preceded it, the minimum interval between the two commands is one clock.
CLK
Command
READ
PRE/PALL
DQ
out A0
out A1
out A2
out A3
CL=2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)
CLK
Command
READ
PRE/PALL
DQ
out A0
out A1
out A2
out A3
CL=3
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)
CLK
Command
READ
PRE/PALL
High-Z
DQ
out A0
CL=2
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 1, 2, 4, 8)
CLK
Command
READ
PRE/PALL
High-Z
DQ
out A0
CL=3
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 1, 2, 4, 8)
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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EDS51321DBH-TS
Write Command to Precharge Command Interval (same bank) When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL.
CLK
Command
DQM
WRIT
PRE/PALL
DQ
in A0
in A1
in A2
tDPL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation))
CLK
Command
DQM
WRIT
PRE/PALL
DQ
in A0
in A1
in A2
in A3
tDPL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data))
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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Bank Active Command Interval 1. Same bank: The interval between the two bank active commands must be no less than tRC. 2. In the case of different bank active commands: The interval between the two bank active commands must be no less than tRRD.
CLK
Command
ACT
ACT
Address
ROW
ROW
BS
tRC
Bank 0 Active
Bank 0 Active
Bank Active to Bank Active for Same Bank
CLK
Command Address
ACT ROW:0 ACT ROW:1
BS
tRRD
Bank 0 Active
Bank 3 Active
Bank Active to Bank Active for Different Bank Mode Register or Extended Mode Register Set to Bank Active Command Interval The interval between setting the mode register or extended mode register and executing a bank active command must be no less than tMRD.
CLK
Command
MRS or EMRS
OPCODE
ACT
Address
BS & ROW
tMRD
Mode Register or Extende Mode Register Set
Bank Active
Mode register set to Bank active command interval
Preliminary Data Sheet E1415E21 (Ver. 2.1)
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DQM Control The DQM controls data mask function for read and write. Each DQM masks corresponding byte. DQM latency is different between reading and writing. Reading When data is read, the output buffer can be controlled by DQM. By setting DQM to low, the output buffer becomes low-Z, enabling data output. By setting DQM to high, the output buffer becomes high-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of DQM during reading is two clocks. Writing Input data can be masked by DQM. By setting DQM to low, data can be written. In addition, when DQM is set to high, the corresponding data is not written, and the previous data is held. The latency of DQM during writing is 0 clock.
CLK DQM DQ High-Z out 0 out 1 out 3
Latency= 2
Reading
CLK
DQM
DQ
in 0
in 1
in 3
Latency = 0
Writing
Preliminary Data Sheet E1415E21 (Ver. 2.1)
39
EDS51321DBH-TS
Refresh Auto-Refresh All the banks must be precharged before executing an auto-refresh command. Since the auto-refresh command updates the internal counter every time it is executed and determines the banks and the ROW addresses to be refreshed, external address specification is not required. The refresh cycles are required to refresh all the ROW addresses within tREF (max.). The output buffer becomes high-Z after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the auto-refresh, an additional precharge operation by the precharge command is not required. Self-Refresh After executing a self-refresh command, the self-refresh operation continues while CKE is held low. During selfrefresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF (max.) period on the condition 1 and 2 below. 1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. 2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting from self-refresh mode. Note: tREF (max.) / refresh cycles. Others Power-Down Mode The Mobile RAM enters power-down mode when CKE goes low in the IDLE state. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held low. In addition, by setting CKE to high, the Mobile RAM exits from the power down mode, and command input is enabled from the next clock. In this mode, internal refresh is not performed. Clock Suspend Mode By driving CKE to low during a bank active or read/write operation, the Mobile RAM enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal state is maintained. When CKE is driven high, the Mobile RAM terminates clock suspend mode, and command input is enabled from the next clock. For details, refer to the "CKE Truth Table".
Preliminary Data Sheet E1415E21 (Ver. 2.1)
40
EDS51321DBH-TS
Timing Waveforms
Read Cycle
tCK tCH t CL
CLK
t RC VIH
CKE
tRCD tSI tHI tSI tHI
tRAS tSI tHI
t RP tSI tHI
/CS
tSI tHI tSI tHI tSI tHI tSI tHI
/RAS
tSI tHI tSI tHI tSI tHI tSI tHI
/CAS
tSI tHI tSI tHI tSI tHI tSI tHI
/WE
tSI tHI tSI tHI tSI tHI tSI tHI
BS
tSI tHI tSI tHI tSI tHI tSI tHI
A10
tSI tHI tSI tHI tSI tHI
Address
tSI tHI
DQM
DQ (input)
tAC tAC tAC tHZ
DQ (output)
t AC tOH
Bank 0 Active Bank 0 Read
tOH
tOH
Bank 0 Precharge
tOH
tLZ
/CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL = VOH or VOL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
41
EDS51321DBH-TS
Write Cycle
tCK tCH tCL
CLK
tRC
VIH
CKE
tRCD tSI tHI tSI tHI tSI tHI tSI tHI tRAS tRP
/CS
tSI tHI tSI tHI tSI tHI tSI tHI
/RAS
tSI tHI tSI tHI tSI tHI tSI tHI
/CAS
tSI tHI tSI tHI tSI tHI tSI tHI
/WE
tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI tSI tHI
BS
tSI tHI
A10
tSI tHI tSI tHI tSI tHI
Address
tSI tHI
DQM
tSI t HI tSI tHI tSI tHI tSI tHI
DQ (input)
tDPL
DQ (output)
Bank 0 Active Bank 0 Write Bank 0 Precharge
CL = 2 BL = 4 Bank 0 access = VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
42
EDS51321DBH-TS
Mode Register Set Cycle
CLK CKE /CS /RAS /CAS /WE
BA0
VIH
BA1 Address DQM DQ (output) DQ (input)
tRP
High-Z valid code
R: b
tMRD
Precharge If needed
Mode register Set
Bank 3 Active
= VIH or VIL
Extended Mode Register Set Cycle
CLK CKE /CS /RAS /CAS /WE
BA0
VIH
BA1 Address DQM DQ (output) DQ (input)
tRP
High-Z valid code
R: b
tMRD
Precharge If needed
Extended mode register Set
Bank 3 Active
= VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
43
EDS51321DBH-TS
Read Cycle/Write Cycle
CLK CKE /CS /RAS /CAS /WE BS Address DQM DQ (output) DQ (input)
Bank 0 Active Bank 0 Read Bank 3 Active
VIH
Read cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
R:a
C:a
R:b a
C:b a+1 a+2 a+3
Bank 3 Bank 0 Read Precharge
C:b' b
High-Z
Bank 3 Read
C:b" b'+1 b" b"+1 b"+2 b"+3
Bank 3 Precharge
b+1 b+2 b+3 b'
Bank 3 Read
CKE /CS /RAS /CAS /WE BS Address DQM DQ (output) DQ (input)
VIH
Write cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
R:a
C:a
R:b
C:b
High-Z
C:b'
C:b"
a
Bank 0 Active Bank 0 Write
a+1 a+2 a+3
Bank 3 Active
b
Bank 3 Write
b+1 b+2 b+3 b'
Bank 0 Precharge Bank 3 Write
b'+1 b"
Bank 3 Write
b"+1 b"+2 b"+3
Bank 3 Precharge
Read/Single Write Cycle
CLK CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
Bank 0 Active Bank 0 Read Bank 3 Active
VIH
R:a
C:a
R:b
C:a' C:a a a a+1 a+2 a+3
Bank 0 Bank 0 Read Write
a
a+1 a+2 a+3
Bank 0 Precharge Bank 3 Precharge
CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
VIH
R:a
C:a
R:b
C:a a a a+1 a+3
Bank 0 Write
C:b C:c b c
Bank 0 Active
Bank 0 Read
Bank 3 Active
Bank 0 Bank 0 Write Write
Bank 0 Precharge
Read/Single write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
44
EDS51321DBH-TS
Read/Burst Write Cycle
CLK CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
Bank 0 Active Bank 0 Read Bank 3 Active
R:a
C:a
R:b
C:a' a a a+1 a+2 a+3
Clock suspend
a+1 a+2 a+3
Bank 0 Precharge Bank 3 Precharge
Bank 0 Write
CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
VIH
R:a
C:a
R:b
C:a a a a+1 a+3
Bank 0 Write Bank 0 Precharge
a+1 a+2 a+3
Bank 0 Active
Bank 0 Read
Bank 3 Active
Read/Burst write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
Auto-Refresh Cycle
CLK CKE /CS
/RAS
VIH
/CAS /WE BS Address DQM DQ (input) DQ (output)
t RP
Precharge If needed Auto-Refresh
A10=1
R:a
C:a
High-Z
a
a+1
tRFC
Auto-Refresh
tRFC
Active Bank 0
Read Bank 0
Refresh cycle and Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
Preliminary Data Sheet E1415E21 (Ver. 2.1)
45
EDS51321DBH-TS
Self-Refresh Cycle
CLK CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
High-Z
A10=1
CKE Low
tRP
Precharge command If needed Self-refresh entry command
tSREX
Self-refresh exit ignore command or No operation
tSREX
Next AutoNext Self-refresh Self-refresh clock refresh exit clock entry enable command ignore command enable or No operation
Self refresh cycle /RAS-/CAS delay = 3 CL = 3 BL = 4 = VIH or VIL
Clock Suspend Mode
tSI
tHI
tSI
CLK CKE /CS /RAS /CAS /WE BS Address DQM
DQ (output) DQ (input)
Bank0 Active clock Active suspend start Active clock Bank0 suspend end Read Bank3 Active
Read suspend start
Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
R:a
C:a
R:b a a+1 a+2
High-Z
Read suspend end
C:b
a+3
b
b+1 b+2 b+3
Bank3 Read
Bank0 Precharge
Earliest Bank3 Precharge
CKE /CS /RAS /CAS /WE BS Address DQM
DQ (output) DQ (input)
Bank0 Active
Active clock suspend start
Write cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
R:a
C:a R:b
High-Z
C:b
a
a+1 a+2
Write suspend start
a+3 b
Write suspend end
b+1 b+2 b+3
Earliest Bank3 Precharge
Active clock Bank0 Bank3 supend end Write Active
Bank3 Bank0 Write Precharge
Preliminary Data Sheet E1415E21 (Ver. 2.1)
46
EDS51321DBH-TS
Power Down Mode
CLK CKE /CS /RAS /CAS /WE BS Address DQM DQ (input) DQ (output)
tRP
Precharge command If needed Power down entry
Power down /RAS-/CAS delay = 3 mode exit Active Bank 0 /CAS latency = 3
A10=1
CKE Low
R: a
High-Z
Power down cycle Burst length = 4 = VIH or VIL
Initialization Sequence
CLK CKE /CS /RAS /CAS /WE Address DQM DQ
VIH High-Z tRP All banks Precharge Auto-Refresh t RFC Auto-Refresh tRFC Mode register Set tMRD Extended mode register Set tMRD Bank active If needed valid code code Valid VIH
Preliminary Data Sheet E1415E21 (Ver. 2.1)
47
EDS51321DBH-TS
Package Drawing
90-ball FBGA Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
8.0 0.1
INDEX MARK
0.2 S A
13.0 0.1
0.2 S B
0.2 S
1.0 max.
S
0.1 S
A
0.35 0.05 90-0.45 0.05
0.08 M S A B
INDEX MARK
1.6 0.8
6.4
11.2
B
0.8
ECA-TS2-0238-01
Preliminary Data Sheet E1415E21 (Ver. 2.1)
48
EDS51321DBH-TS
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDS51321DBH. Type of Surface Mount Device EDS51321DBH: 90-ball FBGA < Lead free (Sn-Ag-Cu) >
Preliminary Data Sheet E1415E21 (Ver. 2.1)
49
EDS51321DBH-TS
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function.
CME0107
Preliminary Data Sheet E1415E21 (Ver. 2.1)
50
EDS51321DBH-TS
Mobile RAM is a trademark of Elpida Memory, Inc.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Be aware that this product is for use in typical electronic equipment for general-purpose applications. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] Usage in environments with special characteristics as listed below was not considered in the design. Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in environments with the special characteristics listed below. Example: 1) Usage in liquids, including water, oils, chemicals and organic solvents. 2) Usage in exposure to direct sunlight or the outdoors, or in dusty places. 3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 , SO 2 , and NO x . 4) Usage in environments with static electricity, or strong electromagnetic waves or radiation. 5) Usage in places where dew forms. 6) Usage in environments with mechanical vibration, impact, or stress. 7) Usage near heating elements, igniters, or flammable items. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations.
M01E0706
Preliminary Data Sheet E1415E21 (Ver. 2.1)
51

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